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| SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J23FE High Current Switching Applications DC-DC Converter * * Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -12 8 -1.2 -4.8 500 150 -55~150 Unit V V A mW C C 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA 2-2N1A Note: Using continuously under heavy loads (e.g. the application of Weight: 3 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit 6 5 4 KE 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. 1 2007-11-01 SSM6J23FE Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 8 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID =-0.1 mA VDS = -3 V, ID = -0.6A ID = -0.6 A, VGS = -4 V ID = -0.6 A, VGS = -2.5 V (Note2) (Note2) (Note2) Min - -12 -4 - -0.5 1.75 - Typ. - - - - - 3.5 110 145 420 75 93 23 30 Max 1 - - -1 -1.1 - 160 210 - - - - - Unit A V A V S m pF pF pF ns - - - - - - VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.6A VGS = 0~-2.5 V, RG = 4.7 Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 -2.5 V 10 s VDD = -10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C ID (b) VIN out 0V 10% 90% in RG VDD -2.5 V VDS (ON) 90% 10% tr ton (c) VOUT VDD tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. 2 2007-11-01 SSM6J23FE ID - V D S -4 -4.0V -3.5 Drain current I D (mA) -3 -2.5 -2 -1.5 -1 -0.5 0 0 -0.5 -1 -1.5 -2 -2.5V -2.0V Common Source Ta=25 ID - V G S - 10000 Common Source VDS =-3V - 1000 Drain current I D (mA) - 100 V GS =-1.8V Ta=85 - 10 -1 -25 25 - 0.1 - 0.01 0 -0.5 -1 -1.5 -2 -2.5 Drain-Source voltage V DS (V) Gate-Source voltage V GS (V) R D S (O N) - ID 300 Common Source Ta=25 Drain-Source on-resistance RDS(ON) (m) 200 -2.5V Drain-Source on-resistance R DS(ON) () 0.5 R D S (O N) - V G S Common Source ID=-0.6A 0.4 0.3 0.2 100 25 Ta=85 VGS =-4.0V 0.1 -25 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 Drain current I D (A) 0 0 -2 -4 Gate-Source Voltage V GS (V) -6 -8 R D S (O N) - Ta 300 Common Source ID=-0.6A Drain-Source on-resistance R DS(ON) () V th - Ta -2 -1.8 -1.6 Common Source ID=-0.1mA V DS =-3V 200 V GS =-2.5V Gate threshold voltage Vth(V) -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 100 -4.0V 0 -25 0 25 50 75 100 125 150 Ambient temperture Ta () 0 -25 0 25 50 75 100 125 150 Ambient temperture Ta () 3 2007-11-01 SSM6J23FE |Yfs| - I D 100 Forward transfer admittance |Yfs| (mS) Commonm Source V DS =-3V Ta=25 10 C - VDS 1000 C iss C oss Capacitance C (pF) 100 C rss 1 10 Common Source VGS =0V f=1MHz Ta=25 1 0.1 0.01 - 0.001 - 0.01 - 0.1 -1 - 10 - 0.1 -1 - 10 - 100 Drain Current I D (A) Drain-Source voltage V DS (V) ID R - V D S -2 t - ID 1000 Common Source toff 100 Switching time t (ns) tf ton 10 tr V DD=-10V V GS =0-2.5V Ta=25 Drain reverse current I DR (A) Common Source V GS =0 Ta=25 -1.5 D -1 G S IDR -0.5 1 0 0 0.2 0.4 0.6 0.8 1 0.1 - 0.01 - 0.1 -1 - 10 Drain-Source voltage V DS (V) Drain curren I D (A) Dyn a mic In p u t Ch aracteristic -10 Common Source VDD=-10V Gate-Source voltage V GS (V) -8 Drain current I D (A) S afe o p eratin g area - 10 1ms IDmax (Pulsed) * 10ms 100ms ID max (Continuous) DC operation Ta=25 ID=1.2A Ta=25 1 -6 - 0.1 -4 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t , Cu pad: 645 mm2 ) - 0.01 *:Single nonrepetive Pulse Ta 25C Curves must be derated linealy with increase in temperture. -2 0 0 1 2 3 4 5 6 7 8 9 10 Tatal gate charge Qg (nC) - 0.001 - 0.1 -1 - 10 - 100 Drain-Source current V DS (V) 4 2007-11-01 SSM6J23FE rth - tw (MOSFET) rth (C/W ) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance 100 10 1 0.001 0.01 0.1 1 Pulse width tw (s) 10 100 1000 P D - Ta 600 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2 500 Drain power dissipationP D (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta () 5 2007-11-01 SSM6J23FE RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01 |
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